Purchase MX043J, In-stock MX043J From SeekIC.
- Table of contents:
MX043J
-
Suppliers
DataSheet
General Description
MX043J Maximum Ratings
| DESCRIPTION | SYMBOL | MAX. | UNIT |
| Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ 25 |
BVDSS |
200 | Volts |
| Drain-to-Gate Breakdown Voltage @ TJ 25, RGS= 1 M | BVDGR | 200 | Volts |
| Continuous Gate-to-Source Voltage | VGS | +/-20 | Volts |
| Transient Gate-to-Source Voltage | VGSM | +/-30 | Volts |
| Continuous Drain Current Tj= 25 Tj= 100 |
ID25 ID100 |
44 28 |
Amps |
| Peak Drain Current, pulse width limited by TJmax | IDM | 132 | Amps |
| Repetitive Avalanche Current | IAR |
44 | Amps |
| Repetitive Avalanche Energy | EAR | tbd | mJ |
| Single Pulse Avalanche Energy | EAS | tbd | mJ |
| Power Dissipation | PD | 300 | Watts |
| Junction Temperature Range | Tj | -55 to +125 | |
| Storage Temperature Range | Tstg | -55 to +125 | |
| Continuous Source Current (Body Diode) | IS | 44 | Amps |
| Pulse Source Current (Body Diode) | ISM | 132 | Amps |
| Thermal Resistance, Junction to Case | JC |
0.25 | /W |
| Weight | - | grams |
MX043J Features
` Harris FSC260R die
` total dose: 100 kRAD(Si) within pre-radiation parameter limits
` dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical
` dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM typical
` neutron: 1013 neutrons/cm2 within pre-radiation parameter limits
` photocurrent: 17 nA/RAD(Si)/sec typical
` rated Safe Operating Area Curve for Single event Effects
` rugged polysilicon gate cell structure with ultrafast body diode
` low inductance surface mount power package available with "J-leads" (MX043J) or "gullwing-leads" (MX043G)
` very low thermal resistance
` reverse polarity available upon request add suffix "R"st
` total dose: 100 kRAD(Si) within pre-radiation parameter limits
` dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical
` dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM typical
` neutron: 1013 neutrons/cm2 within pre-radiation parameter limits
` photocurrent: 17 nA/RAD(Si)/sec typical
` rated Safe Operating Area Curve for Single event Effects
` rugged polysilicon gate cell structure with ultrafast body diode
` low inductance surface mount power package available with "J-leads" (MX043J) or "gullwing-leads" (MX043G)
` very low thermal resistance
` reverse polarity available upon request add suffix "R"st
MX043J
PDF/DataSheet Download
- Datasheet: MX043J
- File Size: 187500 KB
- Manufacturer: MICROSEMI [Microsemi Corporation]
- Click here to Download
- ·MX014
- CMLMICRO [CML Microcircuits]
- Voice Band inverter
- 199615 KB
- ·MX019
- CMLMICRO [CML Microcircuits]
- Quad Digital Control Amplifier
- 181572 KB
- ·MX019DW
- Digitally Controlled Gain Amplifier
- 249015 KB
- ·MX019J
- Digitally Controlled Gain Amplifier
- 249015 KB
- ·MX019P
- Digitally Controlled Gain Amplifier
- 249015 KB
- ·MX029
- CMLMICRO [CML Microcircuits]
- Dual Digitally Controlled Amplifier
- 176064 KB
- ·MX040-20
- MICROSEMI [Microsemi Corporation]
- ELP EXTRA LOW PROFILE STANDARD RECTIFIER
- 39897 KB
- ·MX043G
- MICROSEMI [Microsemi Corporation]
- RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
- 187500 KB
MX043J Relative Products
MX043G
MX040-20
MX029
The MX029 Digitally Controlled Amplifier Array replaces audio level controls in radio and wireline communications applications. It is a single-chip LSI circuit comprised of two discrete, digitally controlled gain sections. Each section has 48 distinct gain s...
MX019
The MX019 Digitally Adjustable Amplifier Array replaces trimmer potentiometers and volume controls in Cellular, LMR, Telephony and Communication applications where voice or data signals need adjustment. The MX019 is a single-chip LSI consisting of four digit...
MX014
The MX014 Voice Band Inverter gives the security of private voice communications to land mobile radio users, as well as to the users of other shared radio channel systems. Designed for use in half-duplex systems, the MX014 exchanges high and low frequencies ...
Mx
Hotspot Suppliers Product
SN65HVD05DR
Price: 1.68-1.73 USD
3-state differential line driver and differential line receiver, 40MBPS, 8-SOIC
ICS93722BF
Price: 0.1-10 USD
ICS93722YFLFT, DDR Phase, Lock Loop Zero Delay Buffer, SSOP-28, -0.5V to 3.6V
S8JC-Z15024C
Price: 20-25 USD
Economical Power Supply, 5 V, 3.0 A, 15 to 350 W, Omron Electronics LLC
MAX221ECAE
Price: 1-2 USD
IC TXRX RS-232 5V 16-SSOP - MAX221ECAE
2DI300A-050
Price: 1-100 USD
power transistor module, 600 V, 300 A, high DC current gain, high voltage
SN74AUCH16244DGGR
Price: 0.16-3.18 USD
IC BUFF/DVR TRI-ST 16BIT 48TSSOP - SN74AUCH16244DGGR
CL05C101JANC
Price: 0.001-0.002 USD
CL05C101JANC, Capacitor, Reel
TPS79301DBVR
Price: 0.5-1 USD
SOT23-6, ultralow-noise, high PSRR, inear regulator
SFC2309-200.TC
Price: 2-5 USD
SFC2309-200.TC, BGA, Semtech Corporation, Integrated Circuits
IRLZ34NS
Price: 1-4 USD
HEXFET Power MOSFET, TO263, Logic-Level Gate Drive, Advanced Process Technology, 55V
MIC5265-2.8YD5
Price: 0.3-0.35 USD
TSOT23-5, 150mA, uCap LDO Regulator
ACT4060SH
Price: 0.24-0.3 USD
step-down DC/DC converter, SOP8, -0.3 to 25 V, 2A Output Current, 420kHz Switching Frequency
