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Part Number: MX28F2000P

 

 

 

 

Description: The MX28F2000P is a 2-mega bit Flash memory organized as 256K bytes of 8 bits each. MXIC's Flash memor...


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MX28F2000P General Description


The MX28F2000P is a 2-mega bit Flash memory organized as 256K bytes of 8 bits each. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F2000P is packaged in 32-pin PDIP, PLCC and TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

The standard MX28F2000P offers access times as fast as 70 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F2000P has separate chip enable (CE) and output enable (OE ) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F2000P uses a command register to manage this functionality, while maintaining a standard 32-pin pinout. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 10,000 erase and program cycles.

The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX28F2000P uses a 12.0V ± 5% VPP supply to perform the Auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

MX28F2000P Maximum Ratings

Ambient Operating Temperature ..    0oC to70oC
Storage Temperature ........-65oC to 125oC
Applied Input Voltage .........  -0.5V to 7.0V
Applied Output Voltage .... -0.5V to VCC + 0.5V
VCC to Ground Potential ........-0.5V to 7.0V
A9 & Vpp................   -0.5V to 13.5V

MX28F2000P Features

• 262,144 bytes by 8-bit organization
• Fast access time: 70/90/120 ns
• Low power consumption
50mA maximum active current
100uA maximum standby current
• Programming and erasing voltage 12V ± 5%
• Command register architecture
Byte Programming (15us typical)
Auto chip erase 5 seconds typical (including preprogramming time)
Block Erase
• Optimized high density blocked architecture
Four 4-KB blocks (Top)
Fourteen 16-KB blocks
Four 4-KB blocks (Bottom) P/N: PM0380 1
• Auto Erase (chip & block) and Auto Program
DATA polling
Toggle bit
• 10,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Advanced CMOS Flash memory technology
• Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts
• Package type:
32-pin plastic DIP
32-pin PLCC
32-pin TSOP (Type 1)

MX28F2000P Connection Diagram

MX28F2000P  Connection Diagram

MX28F2000P datasheet

MX28F2000P
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