MX28F2000PQC-12C4

The MX28F2000PQC-12C4 is a 2-mega bit Flash memory organized as 256K bytes of 8 bits each. The feature of MX28F2000TPC-12C4 are as follows: (1)262,144 bytes by 8-bit organization; (2)Fast access time: 70/90/120 ns; (3)Low power consumption; (4)50mA maximum active current; (5)100uA maximum standby current; (6)Programming and erasing voltage 12V ?5%; (7)Command register architecture; (8)Byte Programming (15us typical); (9)Auto chip erase 5 seconds typical (including preprogramming time); (10)Block Erase; (11)Optimized high density blocked architecture; (12)Four 4-KB blocks (Top); (13)Fourteen 16-KB blocks; (14)Four 4-KB blocks (Bottom) P/N: PM0380 1; (15)Auto Erase (chip & block) and Auto Program; (16)DATA polling; (17)Toggle bit; (18)10,000 minimum erase/program cycles; (19)Latch-up protected to 100mA from -1 to VCC+1V; (20)Advanced CMOS Flash memory technology; (21)Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts; (22)Package type: 32-pin plastic DIP, 32-pin PLCC, 32-pin TSOP.

The absolute maximum ratings of the MX28F2000PQC-12C4 are: (1)Ambient Operating Temperature: 0 to 70; (2)Storage Temperature: -65 to 125; (3)Applied Input Voltage: -0.5V to 7.0V; (4)Applied Output Voltage: -0.5V to 7.0V; (5)VCC to Ground Potential: -0.5V to 7.0V; (6)A9 & VPP: -0.5V to 13.5V.

The following is about the electrical characteristics of MX28F2000PQC-12C4: (1)Input Leakage Current: 10 uA max at VIN = GND to VCC; (2)Output Leakage Current: 10 uA max at VOUT = GND to VCC; (3)VPP Current: 1uA typical and 100 uA max at VPP = 5.5V; (4)Standby VCC current: 1 mA max at CE = VIH; (5)Operating VCC current: 30 mA max at IOUT = 0mA, f=1MHz; (6)Input Low Voltage: -0.3V min and 0.8 V max; (7)Input High Voltage: 2.4 V min and VCC + 0.3 V max; (8)Output Low Voltage: 0.45 V max at IOL = 2.1mA; (9)Output High Voltage: 2.4 V min at IOH = -400uA.