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Part Number: M I E -824L3

 

 

 

 

Description: The MIE-824L3 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology. It is molded in ...


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M I E -824L3 General Description


The MIE-824L3 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology. It is molded in water clear plastic package.

M I E -824L3 Maximum Ratings

Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds

M I E -824L3 Features

` High radiant power and high radiant intesity
` Standard T-1 3/4 ( 5mm) package
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
` Radiant angle: 80°

M I E -824L3 datasheet


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