NAND256W3A2BN6E

Flash NAND 256 MEG

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SeekIC No. : 00467444 Detail

NAND256W3A2BN6E: Flash NAND 256 MEG

floor Price/Ceiling Price

Part Number:
NAND256W3A2BN6E
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/29

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Product Details

Quick Details

Data Bus Width : 8 bit Memory Type : NAND Flash
Memory Size : 256 Mbit Architecture : Sectored
Interface Type : Parallel Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V Maximum Operating Current : 20 mA
Operating Temperature : + 85 C Mounting Style : SMD/SMT
Package / Case : TSOP Packaging : Tray    

Description

Access Time :
Timing Type :
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Packaging : Tray
Operating Temperature : + 85 C
Memory Size : 256 Mbit
Architecture : Sectored
Data Bus Width : 8 bit
Interface Type : Parallel
Maximum Operating Current : 20 mA
Package / Case : TSOP
Memory Type : NAND Flash


Pinout

  Connection Diagram


Description

The NAND256W3A2BN6E is designed as 256Mbit 528byte / 264 word page, 1.8V/3V, one member of the NAND flash memories. The NAND flash 528 byte/ 264 word page is a family of non-volatile flash memories that uses the single level cell (SLC) NAND cell technology. It is referred to as the small page family. The NAND256W3A2BN6E devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a page is either 528 Bytes (512 + 16 spare) or 264 words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

NAND256W3A2BN6E has many features. (1) High density nand flash memories. (2) NAND interface. (3) Supply voltage which means 1.7 to 1.95V for 1.8V device and 2.7 to 3.6V for 3.0V device. (4) Fast block erase which means block erase time: 2ms (typ) . (5) Status register. (6) Electronic signature. (7) Chip enable 'don't care' option which means simple interface with microcontroller. (8) Serial number option. (9) Hardware data protection which means program/erase locked during power transitions. (10) Data integrity which means 100,000 program / erase cycles and 10 years data retention. (11) RoHS compliance which means lead-free components are compliant with the RoHS directive. (12) Development tools which means error correction code software and hardware models, bad blocks management and wear leveling algorithms, file system OS native reference software and hardware simulation models. And so on. That are the main features.

Some absolute maximum ratings of NAND256W3A2BN6E have been concluded into several points as follow. (1) Its temperatur under bias would be min -50°C and max 125°C. (2) Its storage temperature would be min -65°C and max 150°C. (3) Its input or output voltage would be min -0.6V and max 2.7V for 1.8V devices and would be min -0.6V and max 4.6V for 3V devices. (4) Its supply voltage would be min -0.6V and max 2.7V for 1.8V devices and would be min -0.6V and max 4.6V for 3V devices. It should be noted that stresses above those listed under absolute maximum ratings may cause permanent damage to the device. And so on. If you have any question or suggestion or want to know more information of NAND256W3A2BN6E, please contact us for details. Thank you!




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