Power Driver ICs HIGH VOLT MOSFET DR MOSFET IGBT DRIVER
NCP5111PG: Power Driver ICs HIGH VOLT MOSFET DR MOSFET IGBT DRIVER
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Features: • 50 Vrms Output Noise Without Use of Bypass Capacitor• Low Dropout Voltage ...
| Type : | High Side/Low Side | Rise Time : | 160 ns | ||
| Fall Time : | 75 ns | Supply Voltage - Min : | 10 V | ||
| Supply Current : | 5 mA | Maximum Operating Temperature : | + 150 C | ||
| Mounting Style : | Through Hole | Packaging : | Rail |
| Technical/Catalog Information | NCP5111PG |
| Vendor | ON Semiconductor |
| Category | Integrated Circuits (ICs) |
| Configuration | Half Bridge |
| Voltage - Supply | 10 V ~ 20 V |
| Current - Peak | 250mA |
| Delay Time | 750ns |
| Package / Case | 8-DIP (300 mil) |
| Packaging | Tube |
| Number of Outputs | 2 |
| Input Type | Inverting |
| Number of Configurations | 1 |
| Operating Temperature | -40°C ~ 125°C |
| High Side Voltage - Max (Bootstrap) | 600V |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NCP5111PG NCP5111PG |