Power Driver ICs HIGH VOLT MOSFET DR LO MOSFET IGBT DRVR
NCP5304DR2G: Power Driver ICs HIGH VOLT MOSFET DR LO MOSFET IGBT DRVR
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Features: • 50 Vrms Output Noise Without Use of Bypass Capacitor• Low Dropout Voltage ...
| Type : | High Side/Low Side | Rise Time : | 160 ns | ||
| Fall Time : | 75 ns | Supply Voltage - Min : | 10 V | ||
| Supply Current : | 5 mA | Maximum Operating Temperature : | + 150 C | ||
| Mounting Style : | SMD/SMT | Packaging : | Reel |
| Technical/Catalog Information | NCP5304DR2G |
| Vendor | ON Semiconductor |
| Category | Integrated Circuits (ICs) |
| Configuration | Half Bridge |
| Voltage - Supply | 10 V ~ 20 V |
| Current - Peak | 250mA |
| Delay Time | 100ns |
| Package / Case | 8-SOIC (3.9mm Width) |
| Packaging | Tape & Reel (TR) |
| Number of Outputs | 2 |
| Input Type | Non-Inverting |
| Number of Configurations | 1 |
| Operating Temperature | -40°C ~ 125°C |
| High Side Voltage - Max (Bootstrap) | 600V |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NCP5304DR2G NCP5304DR2G |