NDB4060

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.078 Ohms
Package / Case : TO-263AB
Continuous Drain Current : +/- 15 A


Features:

`15A, 50V. R<sub>DS(ON)</sub> = 0.10 @ V<sub>GS</sub>=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R<sub>DS(ON)</sub>.
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications. 


Specifications

Symbol	Parameter	NDP4050	NDB4050	Units
VDSS	Drain-Source Voltage	60		V
VDGR	Drain-Gate Voltage (RGS 1 MW)	60		V
VGSS	Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs)	± 20		V
		± 40
ID	Drain Current - Continuous - Pulsed	± 15		A
		± 45
PD	Total Power Dissipation Derate above 25°C	50		W
		0.33		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

Description

These N-Channel enhancement mode power field effect transistors of NDB4060 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB4060 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDB4060
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	100 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	450pF @ 25V
Power - Max	50W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NDB4060 NDB4060 NDB4060CT ND NDB4060CTND NDB4060CT