NDB4060L

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power - Max: 50W
Current - Continuous Drain (Id) @ 25° C: 15A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) @ Vds: 600pF @ 25V
Gate Charge (Qg) @ Vgs: 17nC @ 5V
Supplier Device Package: D²PAK
Manufacturer: Fairchild Semiconductor
Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V


Features:

`15A, 60V. R<sub>DS(ON)</sub> = 0.1 @ V<sub>GS</sub> = 5V
`Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2.0V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.


Specifications

Symbol	Parameter	NDP4060L	NDB4060L	Units
VDSS	Drain-Source Voltage	60		V
VDGR	Drain-Gate Voltage (RGS 1 M)	60		V
VGSS	Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs)	± 16		V
		± 25
ID	Drain Current - Continuous - Pulsed	15		A
		45
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	50		W
		0.33		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

Description

These logic level N-Channel enhancement mode power field effect transistors of NDB4060L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB4060L is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDB4060L
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	80 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 25V
Power - Max	50W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NDB4060L NDB4060L NDB4060LCT ND NDB4060LCTND NDB4060LCT