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MFG:Fairchild
Part Number: NDB5060L
MFG: Fairchild
Description: These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchi...
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NDB5060L
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DataSheet
General Description
NDB5060L General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB5060L Maximum Ratings
| Symbol |
Parameter |
NDP5060L |
NDB5060L |
Units |
| VDSS | Drain-Source Voltage |
60 |
V | |
| VDGR | Drain-Gate Voltage (RGS 1 M) |
60 |
V | |
| VGSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
± 16 |
V | |
|
± 25 | ||||
| ID | Drain Current - Continuous - Pulsed |
26 |
A | |
|
78 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
68 |
W | |
|
0.45 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
NDB5060L Features
`26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V
RDS(ON) = 0.035 @ VGS= 10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
RDS(ON) = 0.035 @ VGS= 10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDB5060L
PDF/DataSheet Download
- Datasheet: NDB5060L
- File Size: 367574 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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