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MFG:MOT/ON Package Cooled:TO-
Part Number: NDB510B
MFG: MOT/ON
Package Cooled: TO-
Description: These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
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NDB510B
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DataSheet
General Description
NDB510B General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB510B Maximum Ratings
|
Symbol |
Parameter |
NDP510A NDP510AE NDB510A NDB510AE |
NDP510B NDP510BE NDB510B NDB510BE |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
15 |
13 |
A |
|
60 |
52 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
75 |
W | |
|
0.5 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDB510B Features
`15 and 13A, 100V. RDS(ON) = 0.12 and 0.15.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDB510B
PDF/DataSheet Download
- Datasheet: NDB510B
- File Size: 74239 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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NDB510B Relative Products
NDB510AE
These N-channel enhancement mode power field effect transistors NDB510AEare produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide super...
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NDB508AE
These N-channel enhancement mode power field effect transistors NDB508AE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide supe...
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