NDC651N

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 3.2 A
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.038 Ohms
Configuration : Single Triple Drain Dual Source


Features:

`3.2A, 30V. R<sub>DS(ON)</sub> = 0.09@ V<sub>GS</sub> = 4.5V R<sub>DS(ON)</sub> = 0.06 @ V<sub>GS</sub> = 10V.
`Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.


Pinout




Specifications

Symbol	Parameter		NDC651N	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage - Continuous		30 20 3.2 15 1.6 1 0.8 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
</table

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 30

°C/W °C/W

Description

These N-Channel logic level enhancement mode power field effect transistors NDC651N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. NDC651N is particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Parameters:

Technical/Catalog Information	NDC651N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.2A
Rds On (Max) @ Id, Vgs	60 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	290pF @ 15V
Power - Max	800mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDC651N NDC651N NDC651NCT ND NDC651NCTND NDC651NCT