Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Maximum Operating Temperature
: + 150 C
Gate-Source Breakdown Voltage
: +/- 8 V
Configuration
: Dual Dual Drain
Continuous Drain Current
: 2.7 A
Resistance Drain-Source RDS (on)
: 0.061 Ohms
Package / Case
: SSOT-8
Features: · -2.7 A, -20 V. RDS(ON) = 0.07 W @ VGS = -4.5 V RDS(ON) = 0.095 W @ VGS = -2.7 V.
· Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
· High density cell design for extremely low RDS(ON).
· Exceptional on-resistance and maximum DC current capability.Pinout
Specifications
|
Symbol |
Parameter |
NDH8304P |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage - Continuous |
-20
±8
-2.7
-10
0.8
-55 to 150 |
V
V
A
W
°C |
|
ID |
Drain Current Continuous Pulsed |
(Note 1) |
|
PD |
Maximum Power Dissipation |
(Note 1 ) |
| TJ,TSTG |
Operating and Storage Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1)
(Note 1) |
156
40 |
°C/W
°C/W |
DescriptionSuperSOTTM-8 P-Channel enhancement mode power field effect transistors NDH8304P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDH8304P is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Parameters: | Technical/Catalog Information | NDH8304P |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.7A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 2.7A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 865pF @ 10V |
| Power - Max | 800mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 23nC @ 4.5V |
| Package / Case | SuperSOT-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDH8304P
NDH8304P
|
NDH8304P Data Sheet
