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NDH8320C

Features: `N-Channel 3 A, 20 V, RDS(ON) =0.06 @ VGS=4.5 V RDS(ON) =0.075 @ VGS=2.7 V P-Channel -2A, -20V, RDS(ON) =0.13 @ VGS=-4.5 V RDS(ON)=0.19 @ VGS=-2.7 V.`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.`High density cell design...

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SeekIC No. : 004433215 Detail

NDH8320C: Features: `N-Channel 3 A, 20 V, RDS(ON) =0.06 @ VGS=4.5 V RDS(ON) =0.075 @ VGS=2.7 V P-Channel -2A, -20V, RDS(ON) =0.13 @ VGS=-4.5 V RDS(ON)=0.19 @ VGS=-2.7 V.`Proprietary SuperSOTTM-8 package desig...

NDH8320C Data Sheet

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Part Number:
NDH8320C
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`N-Channel 3 A, 20 V, RDS(ON) =0.06 @ VGS=4.5 V RDS(ON) =0.075 @ VGS=2.7 V P-Channel -2A, -20V, RDS(ON) =0.13 @ VGS=-4.5 V RDS(ON)=0.19 @ VGS=-2.7 V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.


Pinout

Connection Diagram


Specifications

Symbol
Parameter

N-Channel

P-Channel
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage - Continuous
20
8
3
15
-20
-8
-2
-10
V
V
A

W

°C
ID
 Drain Current Continuous Pulsed (Note 1)
PD
 Power Dissipation for Single Operation (Note 1)
0.8
-55 to 150
TJ,TSTG Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC		 Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case		 (Note 1)
(Note 1)

156
40

 °C/W
°C/W



Description

These dual N- and P -Channel enhancement mode power field effect transistors NDH8320C are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDH8320C is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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