NDS356AP_L99Z

MOSFET P-Ch LL FET Enhancement Mode

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SeekIC No. : 00160629 Detail

NDS356AP_L99Z: MOSFET P-Ch LL FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDS356AP_L99Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/19

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.1 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 0.3 Ohms
Continuous Drain Current : 1.1 A


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