NE3210S01

Continuous Drain Current : 70 mA
Mounting Style : SMD/SMT
Technology Type : pHEMT
Frequency : 12 GHz
Forward Transconductance gFS (Max / Min) : 55 mS
Gate-Source Breakdown Voltage : - 3 V
Gain : 13.5 dB
Drain Source Voltage VDS : 4 V
Maximum Operating Temperature : + 125 C
Power Dissipation : 165 mW
Noise Figure : 0.35 dB
Package / Case : SO-1


Features:

• Super Low Noise Figure & High Associated Gain
  NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
• Gate Length: Lg 0.20 m
• Gate Width : Wg = 160 m


Specifications

PARAMETER	SYMBOL	RATINGS	UNIT
Drain to Source Voltage	VDS	4.0	V
Gate to Source Voltage	VGS	−3.0	V
Drain Current	ID	IDSS	mA
Gate Current	IG	80	A
Total Power Dissipation	Ptot	125	mW
Channel Temperature	Tch	+125
Storage Temperature	Tstg	−65 to +125

Description

The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.