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NE32584C

Features: • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP, Ga = 12.5 dB TYP. at f = 12 GHz• Gate Length : Lg d 0.2 m• Gate Width . : Wg = 200 mSpecifications Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS 3.0 V Drain Current ID...

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SeekIC No. : 004433333 Detail

NE32584C: Features: • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP, Ga = 12.5 dB TYP. at f = 12 GHz• Gate Length : Lg d 0.2 m• Gate Width . : Wg = 200 mSpecifications ...

NE32584C Data Sheet

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Part Number:
NE32584C
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super Low Noise Figure & High Associated Gain
  NF = 0.45 dB TYP, Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length : Lg d 0.2 m
• Gate Width . : Wg = 200 m


Specifications

Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS 3.0 V
Drain Current ID IDSS mA
Gate Current IG 100 A
Total Power Dissipation Ptot 165 mW
Channel Temperature Tch 150
Storage Temperature Tstg 65 to +150



Description

The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.




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