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NE334S01-T1

Transistors RF GaAs Low Noise HJ FET

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SeekIC No. : 00219204 Detail

NE334S01-T1: Transistors RF GaAs Low Noise HJ FET

NE334S01-T1 Data Sheet

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Part Number:
NE334S01-T1
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/3/30

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Product Details

Quick Details

Technology Type : HEMT Frequency : 4 GHz
Gain : 16 dB Noise Figure : 0.25 dB
Forward Transconductance gFS (Max / Min) : 85 mS Drain Source Voltage VDS : 4 V
Gate-Source Breakdown Voltage : - 3 V Continuous Drain Current : 150 mA
Maximum Operating Temperature : + 125 C Power Dissipation : 300 mW
Mounting Style : SMD/SMT Package / Case : SO-1    

Description

Mounting Style : SMD/SMT
Technology Type : HEMT
Power Dissipation : 300 mW
Gate-Source Breakdown Voltage : - 3 V
Drain Source Voltage VDS : 4 V
Maximum Operating Temperature : + 125 C
Frequency : 4 GHz
Gain : 16 dB
Package / Case : SO-1
Noise Figure : 0.25 dB
Forward Transconductance gFS (Max / Min) : 85 mS
Continuous Drain Current : 150 mA


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