Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET
NE3509M04-T2-A: Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET
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Technology Type : | HEMT | Frequency : | 2 GHz | ||
Gain : | 17.5 dB | Noise Figure : | 0.4 dB | ||
Forward Transconductance gFS (Max / Min) : | 80 mS | Drain Source Voltage VDS : | 4 V | ||
Gate-Source Breakdown Voltage : | - 3 V | Continuous Drain Current : | 60 mA | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 150 mW | ||
Mounting Style : | SMD/SMT | Package / Case : | FTSMM-4 (M04) |
Technical/Catalog Information | NE3509M04-T2-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel JFET |
Voltage - Rated | 38V |
Current Rating | 60mA |
Package / Case | SC-70-4, SC-82AB, SOT-323-4, SOT-343 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE3509M04 T2 A NE3509M04T2A |