NE350184C

Continuous Drain Current : 70 mA
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Noise Figure : 0.7 dB
Technology Type : HEMT
Gate-Source Breakdown Voltage : - 3 V
Frequency : 20 GHz
Gain : 13.5 dB
Drain Source Voltage VDS : 4 V
Power Dissipation : 165 mW
Forward Transconductance gFS (Max / Min) : 40 mS
Package / Case : Micro-X Ceramic (84 C)


Features:

• Super low noise figure and high associated gain
N_F = 0.7 dB TYP., G_a = 13.5 dB TYP. @ f = 20 GHz
• Micro-X ceramic (84C) package


Application

• 20 GHz-band DBS LNB
• Other K-band communication systems


Specifications

Parameter	Symbol	Ratings	Unit
Drain to Source Voltage	VDS	4	V
Gate to Source Voltage	VGS	-3	V
Drain Current	ID	IDSS	mA
Gate Current	IG	80	A
Total Power Dissipation	Ptot Note	165	mW
Channel Temperature	Tch	+150	°C
Storage Temperature	Tstg	−65 to +150	°C

Parameters:

Technical/Catalog Information	NE350184C
Vendor	NEC
Category	Discrete Semiconductor Products
Transistor Type	N-Channel JFET
Voltage - Rated	38V
Current Rating	70mA
Package / Case	Micro-X ceramic (84C)
Packaging	Tape & Reel (TR)
Other Names	NE350184C NE350184C