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NE350184C

Transistors RF GaAs Low Noise HJ FET

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SeekIC No. : 00219234 Detail

NE350184C: Transistors RF GaAs Low Noise HJ FET

NE350184C Data Sheet

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Part Number:
NE350184C
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Technology Type : HEMT Frequency : 20 GHz
Gain : 13.5 dB Noise Figure : 0.7 dB
Forward Transconductance gFS (Max / Min) : 40 mS Drain Source Voltage VDS : 4 V
Gate-Source Breakdown Voltage : - 3 V Continuous Drain Current : 70 mA
Maximum Operating Temperature : + 150 C Power Dissipation : 165 mW
Mounting Style : SMD/SMT Package / Case : Micro-X Ceramic (84 C)    

Description

Continuous Drain Current : 70 mA
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Noise Figure : 0.7 dB
Technology Type : HEMT
Gate-Source Breakdown Voltage : - 3 V
Frequency : 20 GHz
Gain : 13.5 dB
Drain Source Voltage VDS : 4 V
Power Dissipation : 165 mW
Forward Transconductance gFS (Max / Min) : 40 mS
Package / Case : Micro-X Ceramic (84 C)


Features:

• Super low noise figure and high associated gain
NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz
• Micro-X ceramic (84C) package


Application

• 20 GHz-band DBS LNB
• Other K-band communication systems


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4
V
Gate to Source Voltage
VGS
-3
V
Drain Current
ID
IDSS
mA
Gate Current
IG
80
A
Total Power Dissipation
Ptot Note
165
mW
Channel Temperature
Tch
+150
°C
Storage Temperature
Tstg
−65 to +150
°C



Parameters:

Technical/Catalog InformationNE350184C
VendorNEC
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel JFET
Voltage - Rated 38V
Current Rating70mA
Package / CaseMicro-X ceramic (84C)
PackagingTape & Reel (TR)
Other Names NE350184C
NE350184C



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