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NE3508M04-T2-A

Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET

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SeekIC No. : 00219185 Detail

NE3508M04-T2-A: Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET

NE3508M04-T2-A Data Sheet

floor Price/Ceiling Price

US $ .38~.38 / Piece | Get Latest Price
Part Number:
NE3508M04-T2-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • Unit Price
  • $.38
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Technology Type : HEMT Frequency : 2 GHz
Gain : 14 dB Noise Figure : 0.45 dB
Forward Transconductance gFS (Max / Min) : 100 mS Drain Source Voltage VDS : 4 V
Gate-Source Breakdown Voltage : - 3 V Continuous Drain Current : 120 mA
Maximum Operating Temperature : + 150 C Power Dissipation : 175 mW
Mounting Style : SMD/SMT Package / Case : FTSMM-4 (M04)    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Frequency : 2 GHz
Continuous Drain Current : 120 mA
Gate-Source Breakdown Voltage : - 3 V
Drain Source Voltage VDS : 4 V
Package / Case : FTSMM-4 (M04)
Noise Figure : 0.45 dB
Gain : 14 dB
Forward Transconductance gFS (Max / Min) : 100 mS
Power Dissipation : 175 mW


Parameters:

Technical/Catalog InformationNE3508M04-T2-A
VendorNEC
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel JFET
Voltage - Rated 38V
Current Rating120mA
Package / CaseSC-70-4, SC-82AB, SOT-323-4, SOT-343
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE3508M04 T2 A
NE3508M04T2A



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