Transistors RF GaAs C to Ku Band Super Low Noise Amp N-Ch
NE3512S02-A: Transistors RF GaAs C to Ku Band Super Low Noise Amp N-Ch
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| Technology Type : | HEMT | Frequency : | 12 GHz | ||
| Gain : | 13.5 dB | Noise Figure : | 0.35 dB | ||
| Forward Transconductance gFS (Max / Min) : | 55 mS | Drain Source Voltage VDS : | 4 V | ||
| Gate-Source Breakdown Voltage : | - 3 V | Continuous Drain Current : | 70 mA | ||
| Maximum Operating Temperature : | + 125 C | Power Dissipation : | 165 mW | ||
| Mounting Style : | SMD/SMT | Package / Case : | S0-2 |
| Technical/Catalog Information | NE3512S02-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel JFET |
| Voltage - Rated | 38V |
| Current Rating | 70mA |
| Package / Case | S02 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NE3512S02 A NE3512S02A |