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NE425S01-T1B

Transistors RF GaAs Super Lo Noise HJFET

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SeekIC No. : 00219210 Detail

NE425S01-T1B: Transistors RF GaAs Super Lo Noise HJFET

NE425S01-T1B Data Sheet

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Part Number:
NE425S01-T1B
Mfg:
NEC/CEL
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/22

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Product Details

Quick Details

Technology Type : HEMT Frequency : 12 GHz
Gain : 12 dB Noise Figure : 0.6 dB
Forward Transconductance gFS (Max / Min) : 60 mS Drain Source Voltage VDS : 4 V
Gate-Source Breakdown Voltage : - 3 V Continuous Drain Current : 90 mA
Maximum Operating Temperature : + 125 C Power Dissipation : 165 mW
Mounting Style : SMD/SMT Package / Case : S0-1    

Description

Mounting Style : SMD/SMT
Technology Type : HEMT
Gain : 12 dB
Frequency : 12 GHz
Noise Figure : 0.6 dB
Gate-Source Breakdown Voltage : - 3 V
Drain Source Voltage VDS : 4 V
Maximum Operating Temperature : + 125 C
Power Dissipation : 165 mW
Forward Transconductance gFS (Max / Min) : 60 mS
Package / Case : S0-1
Continuous Drain Current : 90 mA


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