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NE46100

Features: • HIGH DYNAMIC RANGE• LOW IM DISTORTION: -40 dBc• HIGH OUTPUT POWER : 27.5 dBm at TYP• LOW NOISE: 1.5 dB TYP at 500 MHz• LOW COSTSpecifications SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 30 VCEO Collector to Emitter V...

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NE46100: Features: • HIGH DYNAMIC RANGE• LOW IM DISTORTION: -40 dBc• HIGH OUTPUT POWER : 27.5 dBm at TYP• LOW NOISE: 1.5 dB TYP at 500 MHz• LOW COSTSpecifications SYMBOLS ...

NE46100 Data Sheet

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Part Number:
NE46100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• HIGH DYNAMIC RANGE
• LOW IM DISTORTION: -40 dBc
• HIGH OUTPUT POWER : 27.5 dBm at TYP
• LOW NOISE: 1.5 dB TYP at 500 MHz
• LOW COST


Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 30
VCEO Collector to Emitter Voltage V 15
VEBO Emitter to Base Voltage V 3
IC Collector Current mA 250
PT Total Power Dissipation
NE461002
NE461343		 W
W		 3.75
2.0
TJ Junction Temperature
NE46100
NE46134
200
150
TSTG Storage Temperature
NE46100
NE46134
-65 to +200
-65 to +150

Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Chip mounted on an infinite heat sink (see AN-1001 for handling instructions).
3. Packaged device mounted on 0.7 mm x 2.5 cm2 double sided ceramic substrate (copper plating).


Description

NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form.




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