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Part Number: NE46134
Description: NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applicati...
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NE46134
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General Description
NE46134 General Description
NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form.
NE46134 Maximum Ratings
| SYMBOLS | PARAMETERS | UNITS | RATINGS |
| VCBO | Collector to Base Voltage | V | 30 |
| VCEO | Collector to Emitter Voltage | V | 15 |
| VEBO | Emitter to Base Voltage | V | 3 |
| IC | Collector Current | mA | 250 |
| PT | Total Power Dissipation NE461002 NE461343 |
W W |
3.75 2.0 |
| TJ | Junction Temperature NE46100 NE46134 |
200 150 | |
| TSTG | Storage Temperature NE46100 NE46134 |
-65 to +200 -65 to +150 |
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Chip mounted on an infinite heat sink (see AN-1001 for handling instructions).
3. Packaged device mounted on 0.7 mm x 2.5 cm2 double sided ceramic substrate (copper plating).
NE46134 Features
• HIGH DYNAMIC RANGE
• LOW IM DISTORTION: -40 dBc
• HIGH OUTPUT POWER : 27.5 dBm at TYP
• LOW NOISE: 1.5 dB TYP at 500 MHz
• LOW COST
• LOW IM DISTORTION: -40 dBc
• HIGH OUTPUT POWER : 27.5 dBm at TYP
• LOW NOISE: 1.5 dB TYP at 500 MHz
• LOW COST
NE46134
PDF/DataSheet Download
- Datasheet: NE46134
- File Size: 140925 KB
- Manufacturer: NEC [NEC]
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