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Part Number: NE52418

 

 

 

 

Description: NEC's NE52418 is a low cost NPN GaAs HBT(InGaP) suitable for front end LNA's in L/S band mobile commun...


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NE52418 General Description


NEC's NE52418 is a low cost NPN GaAs HBT(InGaP) suitable for front end LNA's in L/S band mobile communication applications. The NE52418 is housed in a 4-pin super mini-mold package, making it ideal for high-density design. NEC's stringent quality assurance and test procedures ensure the highest reliability performance

NE52418 Maximum Ratings

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V
5.0
VCBO
Collector to Base Voltage
V
3.0
VEBO
Emitter to Base Voltage
V
3.0
IC
Collector Current
mA
40
IB
Base Current
mA
0.3
PT
Total Power Dissipation
mW
150
Tj
Junction Temperature
°C
+125
TSTG
Storage Temperature
°C
-65 to +125
Note:
1. Operation in excess of any of these parameters may result in permanent damage.

NE52418 Features

• HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50
• LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50
• OIP3 = +25 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 10 mA, ZS = ZOPT ,1TONE
• 4 PIN SUPER MINI MOLD PACKAGE
• GROUNDED EMITTER TRANSISTOR

NE52418 datasheet

NE52418
PDF/DataSheet Download

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