Transistors RF MOSFET Power L&S Band LD-MOSFET
NE5520379A-T1A-A: Transistors RF MOSFET Power L&S Band LD-MOSFET
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Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 G...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 15 V | ||
| Continuous Drain Current : | 1.5 A | Gate-Source Breakdown Voltage : | 5 V | ||
| Package / Case : | 79A | Packaging : | Reel |
| Technical/Catalog Information | NE5520379A-T1A-A |
| Vendor | NEC Electronics |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | 79A |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 6.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 3.5 V [Max] |
| Continuous Drain Current (Id) | 1.00 A [Nom] |
| Power Dissipation | 20.000 W [Max] |
| Packaging | Tape & Reel, 7" |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NE5520379A T1A A NE5520379AT1AA |