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MFG:NEC D/C:07+


Part Number: NE5520379A
MFG: NEC
D/C: 07+
Description: NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amp...
MFG:NEC D/C:07+


MFG: NEC
D/C: 07+
Description: NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amp...
NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.
|
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
|
VDS |
Drain Supply Voltage |
V |
15.0 |
|
VGS |
Gate Supply Voltage |
V |
5.0 |
|
ID |
Drain Current (continuous) |
A |
1.5 |
|
ID |
Drain Current (Pulse Test)2 |
A |
3.0 |
|
PT |
Total Power Dissipation |
W |
20 |
|
TCH |
Channel Temperature |
°C |
125 |
|
TSTG |
Storage Temperature |
°C |
-65 to +125 |
NE5520379A
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