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Part Number: NE5520379A

 

MFG: NEC

 

D/C: 07+

Description: NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amp...


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NE5520379A General Description


NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.

NE5520379A Maximum Ratings

SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain Supply Voltage
V
15.0
VGS
Gate Supply Voltage
V
5.0
ID
Drain Current (continuous)
A
1.5
ID
Drain Current (Pulse Test)2
A
3.0
PT
Total Power Dissipation
W
20
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-65 to +125
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Duty Cycle 50%, Ton 1 s.

NE5520379A Features

• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER: +35.5 dBm TYP
• HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
• HIGH POWER ADDED EFFICIENCY: 65% TYP @ VDS = 3.2 V, f = 915 MHz
• SINGLE SUPPLY: 2.8 to 6.0 V
• CLASS AB OPERATION
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

NE5520379A Typical Application

• DIGITAL CELLULAR PHONES: 3.2 V GSM900/DCS 1800 Dual Band Handsets
• OTHERS: Two-Way Pagers Retail Business Radio Special Mobile Radio Short Range Wireless

NE5520379A datasheet

NE5520379A
PDF/DataSheet Download

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