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NE552R479A-A

Transistors RF MOSFET Power L&S Band Med Power

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SeekIC No. : 00219522 Detail

NE552R479A-A: Transistors RF MOSFET Power L&S Band Med Power

NE552R479A-A Data Sheet

floor Price/Ceiling Price

US $ 3.03~4.81 / Piece | Get Latest Price
Part Number:
NE552R479A-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $4.81
  • $4.01
  • $3.56
  • $3.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2.45 GHz Gain : 11 dB
Output Power : 26 dBm Drain-Source Breakdown Voltage : 18 V
Continuous Drain Current : 230 mA Gate-Source Breakdown Voltage : 2 V
Maximum Operating Temperature : + 125 C Package / Case : 79A    

Description

Packaging :
Configuration : Single
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 18 V
Maximum Operating Temperature : + 125 C
Frequency : 2.45 GHz
Gain : 11 dB
Output Power : 26 dBm
Continuous Drain Current : 230 mA
Gate-Source Breakdown Voltage : 2 V
Package / Case : 79A


Parameters:

Technical/Catalog InformationNE552R479A-A
VendorNEC Electronics
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package Name79A
FET TypeN-Channel
Drain to Source Voltage (Vdss)15.0 V [Nom]
Voltage Gate to Source (Vgs)5.0 V [Max]
Continuous Drain Current (Id)300.00 mA [Nom]
Power Dissipation10.000 W [Max]
PackagingTape & Reel, 7"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE552R479A A
NE552R479AA



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