NE661M04-T2

The NE661M04-T2 NPN  SILICON  RF  TRANSISTOR  FOR  LOW  CURRENT,LOW  NOISE,  HIGH-GAIN  AMPLIFICATION FLAT-LEAD  4-PIN  THIN  SUPER  MINI-MOLD.

Features of the NE661M04-T2 are:(1)Low noise and high gain with low collector current; (2)NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2mA; (3)Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA; (4)fT = 25 GHz technology; (5)Flat-lead 4-pin thin super mini-mold (t = 0.59 mm).

The absolute maximum ratings of the NE661M04-T2 can be summarized as:(1)Collector to Base Voltage VCBO :15 V; (2)Collector to Emitter Voltage VCEO: 3.3 V; (3)Emitter to Base Voltage VEBO: 1.5 V; (4)Collector Current IC: 12 mA; (5)Total Power Dissipation Ptot Note :39 mW; (6)Junction Temperature Tj :150 °C; (7)Storage Temperature Tstg :65 to +150 °C.

The electrical characteristics(Ta=25) of the NE661M04-T2 can be summarized as:(1)collector cutoff current:100nA; (2)emitter cutoff current:100nA.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .