Transistors RF Bipolar Small Signal NPN High Frequency
NE662M16-T3-A: Transistors RF Bipolar Small Signal NPN High Frequency
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DescriptionThe NE661M04-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT,LOW NOISE, HIGH-GAIN AMPLIFIC...
| Configuration : | Single | Transistor Polarity : | NPN | ||
| Continuous Collector Current : | 0.035 A | Power Dissipation : | 115 mW | ||
| Package / Case : | M16 | Packaging : | Reel |
| Technical/Catalog Information | NE662M16-T3-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 1.1dB ~ 1.5dB @ 2GHz |
| Current - Collector (Ic) (Max) | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 2V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 3.3V |
| Gain | 20dB |
| Power - Max | 115mW |
| Compression Point (P1dB) | 11dBm |
| Package / Case | M04 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NE662M16 T3 A NE662M16T3A |