Transistors RF Bipolar Small Signal NPN High Frequency
NE664M04-A: Transistors RF Bipolar Small Signal NPN High Frequency
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DescriptionThe NE661M04-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT,LOW NOISE, HIGH-GAIN AMPLIFIC...
| Configuration : | Single | Transistor Polarity : | NPN | ||
| Collector- Emitter Voltage VCEO Max : | 5 V | Emitter- Base Voltage VEBO : | 1.5 V | ||
| Continuous Collector Current : | 0.5 A | Power Dissipation : | 0.735 W | ||
| Package / Case : | SOT-343 | Packaging : | Bulk |
| Technical/Catalog Information | NE664M04-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 20GHz |
| Noise Figure (dB Typ @ f) | - |
| Current - Collector (Ic) (Max) | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 3V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| Gain | 12dB |
| Power - Max | 735mW |
| Compression Point (P1dB) | 26dBm |
| Package / Case | M04 |
| Packaging | Bulk |
| Drawing Number | * |
| Mounting Type | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NE664M04 A NE664M04A |