NE677M04

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging :


Features:

• HIGH GAIN BANDWIDTH: fT = 15 GHz
• HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.8 GHz
• HIGH LINEAR GAIN: G_L = 15.5 dB at 1.8 GHz
• NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	9.0
VCBO	Collector to Base Voltage	V	6.0
VEBO	Emitter to Base Voltage	V	2.0
IC	Collector Current	mA	50
PT	Total Power Dissipation2	mW	205
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB.


Description

NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, it is usable in applications from 100 MHz to 3 GHz. It provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. NEC's NE677M04 is housed in NEC's new low profile/flat lead style "M04" package