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NE8500199

Transistors RF GaAs 1W C Band MESFET

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SeekIC No. : 00219257 Detail

NE8500199: Transistors RF GaAs 1W C Band MESFET

NE8500199 Data Sheet

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Part Number:
NE8500199
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

Quick Details

Technology Type : MESFET Frequency : 7.2 GHz
Gain : 9 dB Forward Transconductance gFS (Max / Min) : 300 mS
Drain Source Voltage VDS : 15 V Gate-Source Breakdown Voltage : - 12 V
Continuous Drain Current : 825 mA Maximum Operating Temperature : + 130 C
Power Dissipation : 6 W Mounting Style : SMD/SMT
Package / Case : CHIP    

Description

Noise Figure :
Mounting Style : SMD/SMT
Drain Source Voltage VDS : 15 V
Technology Type : MESFET
Gain : 9 dB
Gate-Source Breakdown Voltage : - 12 V
Package / Case : CHIP
Frequency : 7.2 GHz
Forward Transconductance gFS (Max / Min) : 300 mS
Continuous Drain Current : 825 mA
Maximum Operating Temperature : + 130 C
Power Dissipation : 6 W


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