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NE85002

Features: • Class A operation• High power output• High reliabilitySpecificationsDrain to Source Voltage ..VDSX 15 VGate to Source Voltage .. VGSX 12VGate to Drain Voltage ... VGDX 18 VTotal Power Disipation(*) ...PT 13 WDrain Current .......... ID 2.5 AGate Current .......... IG ...

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SeekIC No. : 004433487 Detail

NE85002: Features: • Class A operation• High power output• High reliabilitySpecificationsDrain to Source Voltage ..VDSX 15 VGate to Source Voltage .. VGSX 12VGate to Drain Voltage ... VGDX ...

NE85002 Data Sheet

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Part Number:
NE85002
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Class A operation
• High power output
• High reliability


Specifications

Drain to Source Voltage ..VDSX               15              V
Gate to Source Voltage .. VGSX              12             V
Gate to Drain Voltage ... VGDX             18              V
Total Power Disipation(*) ...PT              13              W
Drain Current .......... ID               2.5             A
Gate Current ..........  IG              13             mA
Channel Temperature .... Tch             175            °C
Storage Temperature ....Tstg       65 to 175       °C


Description

The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.

NE8500200 is the six-cells recessed gate chip used in '95' package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink)

NEC's NE85002 strigent quality assurance and test procedures assure the highest reliability and performance.




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