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Part Number: NE960R5

 

 

 

 

Description: The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, K...


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NE960R5 General Description


The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc.

The NE961R500 and the NE960R500 are available in chip form. The NE960R500 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 and the NE962R575 are available in a hermetically sealed ceramic package. The NE962R575 is suitable for oscillator application. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.

NE960R5 Maximum Ratings

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
7(-9Note 1)
V
Drain Current
ID
0.7
A
Gate Forward Current
IGF
+5.0
mA
Gate Reverse Current
IGR
5.0
mA
Total Power Dissipation
PT
5.0 (4.2Note 2)
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
65 to +175
°C

Notes 1. NE962R575
          2. NE961R500

NE960R5 Features

• High Output Power : Po (1 dB) = +27.5 dBm TYP.
• High Linear Gain : 9.0 dB TYP.
• High Power Added Efficiency: 30 % TYP. @VDS = 9 V, IDset = 180 mA, f = 14.5 GHz

NE960R5 datasheet

NE960R5
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