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NE960R275

Transistors RF GaAs X KU Band MESFET

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SeekIC No. : 00219258 Detail

NE960R275: Transistors RF GaAs X KU Band MESFET

NE960R275 Data Sheet

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Part Number:
NE960R275
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/15

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Product Details

Quick Details

Technology Type : MESFET Frequency : 14.5 GHz
Gain : 10 dB Drain Source Voltage VDS : 15 V
Gate-Source Breakdown Voltage : - 7 V Continuous Drain Current : 350 mA
Maximum Operating Temperature : + 175 C Power Dissipation : 2.5 W
Mounting Style : Screw Package / Case : Outline75    

Description

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Drain Source Voltage VDS : 15 V
Gain : 10 dB
Power Dissipation : 2.5 W
Technology Type : MESFET
Mounting Style : Screw
Maximum Operating Temperature : + 175 C
Gate-Source Breakdown Voltage : - 7 V
Frequency : 14.5 GHz
Continuous Drain Current : 350 mA
Package / Case : Outline75


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