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MFG:NEC Category:Discrete Semiconductor Products

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Category: Discrete Semiconductor Products

MFG: NEC

Descriptions: TRANS PNP 1GHZ SOT-23

Price Break

1
10
50
100
500
1000

Unit Price

2.45000
2.20500
2.08260
1.87830
1.67416
1.51084

Extended Price

2.45
22.05
104.13
187.83
837.08
1510.84

(All prices are in USD) Prices for reference only

TRANS PNP 1GHZ SOT-23

Technical/Catalog Information	NE97833-A
Vendor	NEC
Category	Discrete Semiconductor Products
Frequency - Transition	5.5GHz
Noise Figure (dB Typ @ f)	2dB ~ 3dB
Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 15mA, 10V
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	12V
Gain	-
Power - Max	200mW
Compression Point (P1dB)	-
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NE97833 A NE97833A

NE944
PDF/DataSheet Download

NE97833
The NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost.
NE97733-T1B-A
TRANS PNP 1GHZ SOT-23
NE97733-A
TRANS PNP 1GHZ SOT-23
NE97733
The NE97733 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97733 offers excellent performance and reliability at low cost.
NE960R5
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. NE960R5 is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distort...
NE960R2
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion a...

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