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NE97833

Transistors RF Bipolar Small Signal PNP High Frequency

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SeekIC No. : 00218978 Detail

NE97833: Transistors RF Bipolar Small Signal PNP High Frequency

NE97833 Data Sheet

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Part Number:
NE97833
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Configuration : Single    

Description

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE02133
• HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

-20

VCBO
Collector to Base Voltage
V
-12
VEBO
Emitter to Base Voltage
V
-3
IC
Collector Current
mA
-50
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost.




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