Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2030M04-T2-A: Transistors RF Silicon Germanium NPN SiGe High Freq
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| Power Dissipation : | 80 mW | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-343 | Packaging : | Reel |
| Technical/Catalog Information | NESG2030M04-T2-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 16GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.1dB @ 2GHz |
| Current - Collector (Ic) (Max) | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 5mA, 2V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 2.3V |
| Gain | 16dB |
| Power - Max | 80mW |
| Compression Point (P1dB) | 12dBm |
| Package / Case | SC-70-4, SC-82AB, SOT-323-4, SOT-343 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NESG2030M04 T2 A NESG2030M04T2A |