Transistors RF Silicon Germanium NPN High Frequency
NESG2101M16-T3-A: Transistors RF Silicon Germanium NPN High Frequency
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| Power Dissipation : | 190 mW | Mounting Style : | SMD/SMT | ||
| Package / Case : | M16 | Packaging : | Reel |
| Technical/Catalog Information | NESG2101M16-T3-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 17GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 2GHz |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 15mA, 2V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| Gain | 11dB ~ 13dB |
| Power - Max | 190mW |
| Compression Point (P1dB) | - |
| Package / Case | M16 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NESG2101M16 T3 A NESG2101M16T3A |