Transistors RF Silicon Germanium NPN High Frequency
NESG2101M16-T3-A: Transistors RF Silicon Germanium NPN High Frequency
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Power Dissipation : | 190 mW | Mounting Style : | SMD/SMT | ||
Package / Case : | M16 | Packaging : | Reel |
Technical/Catalog Information | NESG2101M16-T3-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | 17GHz |
Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 2GHz |
Current - Collector (Ic) (Max) | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 15mA, 2V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Gain | 11dB ~ 13dB |
Power - Max | 190mW |
Compression Point (P1dB) | - |
Package / Case | M16 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NESG2101M16 T3 A NESG2101M16T3A |