Transistors RF Silicon Germanium NPN Amp/Oscillator
NESG2107M33-A: Transistors RF Silicon Germanium NPN Amp/Oscillator
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Emitter- Base Voltage VEBO : | 1.5 V | Continuous Collector Current : | 100 mA |
Power Dissipation : | 130 mW | Mounting Style : | SMD/SMT |
Package / Case : | M33 |
Technical/Catalog Information | NESG2107M33-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | 20GHz |
Noise Figure (dB Typ @ f) | 0.9dB ~ 1.5dB @ 2GHz |
Current - Collector (Ic) (Max) | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 5mA, 1V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Gain | 7dB ~ 10dB |
Power - Max | 130mW |
Compression Point (P1dB) | - |
Package / Case | M33 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NESG2107M33 A NESG2107M33A |