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Part Number: NEZ7785-4D

 

 

 

 

Description: The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at ...


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NEZ7785-4D General Description


The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.

Internal input and output circuits matched to 50 are designed to provide good flatness of gain and output power in allocated band.

To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure.

NEC's strigent quality assurance and test procedures guarantee the highest reliability and performance.

NEZ7785-4D Maximum Ratings

CHARACTERISTIC
SYMBOL
RATINGS
UNIT
NEZ-4D, 4DD
NEZ-8D, 8DD
Drain to Source Voltage
VDS
15
15
V
Gate to Source Voltage
VGS
12
12
V
Gate to Drain Voltage
VGD
18
18
V
Drain Current
ID
4.5
9.0
A
Gate Current
IG
25
50
mA
Total Power Dissipation
PT
25
50
W
Channel Temperature
Tch
175
175
°C
Storage Temperature
Tstg
65 to + 175
65 to + 175
°C

NEZ7785-4D Features

• Internally matched to 50
• High power output
• High linear gain
• High reliability
• Low distortion

NEZ7785-4D datasheet

NEZ7785-4D
PDF/DataSheet Download

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