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Part Number: NEZ7785-15D

 

 

 

 

Description: The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at ...


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NEZ7785-15D General Description


The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.

Internal input and output circuits matched to 50 W are designed to provide good flatness of gain and output power in allocated band.

To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure.

NEC's strigent quality assurance and test procedures guarantee the highest reliability and performance.

NEZ7785-15D Maximum Ratings

CHARACTERISTIC
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGS
-12
V
Gate to Drain Voltage
VGD
-18
V
Drain Current
ID
18
A
Gate Current
IG
100
mA
Total Power Dissipation
PT
100
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
65 to +175
°C

NEZ7785-15D Features

• Internally matched to 50
• High power output
• High linear gain
• High reliability
• Low distortion

NEZ7785-15D datasheet

NEZ7785-15D
PDF/DataSheet Download

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