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DescriptionThe NGA-286 is a high performance InGaP/GaAs heterojunction bipolar transistor MMIC amplifier.A darlington configuration designed with InGaP process technology provides broadband performance up to 6GHz with excellent thermal performance.The heterojunctionof NGA-286increases breakdown vo...

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SeekIC No. : 004433682 Detail

NGA-286: DescriptionThe NGA-286 is a high performance InGaP/GaAs heterojunction bipolar transistor MMIC amplifier.A darlington configuration designed with InGaP process technology provides broadband performa...

NGA-286 Data Sheet

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Part Number:: NGA-286
Supply Ability:: 5000

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Upload time: 2024/4/26

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Product Details

Description

Description

The NGA-286 is a high performance InGaP/GaAs heterojunction bipolar transistor MMIC amplifier.A darlington configuration designed with InGaP process technology provides broadband performance up to 6GHz with excellent thermal performance.The heterojunction of NGA-286 increases breakdown voltage and minimizes leakage current between junctions.

Features of the NGA-286 are:(1)High Gain,14.8 dB at 1950Mhz; (2)cascadable 50 Ohm:1.3:1 VSWR ;(3)operates from single supply; (4)low thermal resistance package;(5)unconditionally stable.

The absolute maximum ratings of the NGA-286 can be summarized as:(1)max.device current::110mA; (2)max. device voltage:6V; (3)max. RF input power:10dBm; (4)max.junction temp.:150; (5)operating temp.range:-40 to 85; (6)max. storage temp.:150.

If you want to know more information about NGA-286 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .

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NGA-286

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