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NIS6111

Features: • Low Forward Drop Improves System Efficiency• Ultra High Speed• Can be used in High Side and Low Side Configurations• 24 V Rating• Allows use of External MOSFETs for Extended Current Handling CapacityApplication• Redundant Power Supplies for Highͨ...

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SeekIC No. : 004433789 Detail

NIS6111: Features: • Low Forward Drop Improves System Efficiency• Ultra High Speed• Can be used in High Side and Low Side Configurations• 24 V Rating• Allows use of External MOS...

NIS6111 Data Sheet

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Part Number:
NIS6111
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Low Forward Drop Improves System Efficiency
• Ultra High Speed
• Can be used in High Side and Low Side Configurations
• 24 V Rating
• Allows use of External MOSFETs for Extended Current Handling Capacity


Application

• Redundant Power Supplies for High−Availability Systems
• Static ORing Diodes
• Low Voltage, Isolated Outputs
• Flyback, Forward Converter, Half Bridge Converters


Specifications

Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage (VK to VA)
VRRM
24
V
Peak Regulator Input (Reg In) Voltage
Vregmax
28
V
Average Rectified Forward Current
IFAV
30
A
Non−repetitive Peak Surge Current
IFSM
90
A
Analog Die Thermal Resistance (Min Copper Area)
A j−a
83
°C/W
MOSFET Die Thermal Resistance (Min Copper Area)
M j−a
78
°C/W
Analog Die Thermal Resistance (Junction−to−Top of Board)
A j−t
4.9
°C/W
MOSFET Die Thermal Resistance (Junction−to−Top of Board)
M j−t
0.6
°C/W
Analog Die Thermal Resistance (Junction−to−Bottom of Board) (Note 4)
A j−b
30
°C/W
MOSFET Die Thermal Resistance (Junction−to−Bottom of Board) (Note 4)
M j−b
7.0
°C/W
Storage Temperature Range
Tstg
−55 to 150
°C
Operating Temperature Range
TJ
−20 to 125
°C



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