Features: •Channel temperature 175 degree rated• Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)• Low Ciss : Ciss = 1300 pF TYP.• Built-in gate protection diodeSpecifications Drain t...
NP32N055HLE: Features: •Channel temperature 175 degree rated• Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)...
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Features: •Channel temperature 175 degree rated• Super low on-state resistance RDS(on)...
| Drain to Source Voltage | VDSS | 55 | V |
| Gate to Source Voltage | VGSS | ±20 | V |
| Drain Current (DC) | ID(DC) | ±32 | A |
| Drain Current (Pulse) Note1 | ID(pulse) | ±100 | A |
| Total Power Dissipation (TA = 25°C) | PT | 1.2 | W |
| Total Power Dissipation (TC = 25°C) | PT | 22 | W |
| Single Avalanche Current Note2 | IAS | 28 / 21 / 8 | A |
| Single Avalanche Energy Note2 | EAS | 7.8 / 44 / 64 | mJ |
| Channel Temperature | Tch | 175 | |
| Storage Temperature | Tstg | 55 to +175 |