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NP35N04YUG-E1-AY

MOSFET N-CH 40V 35A 8HSON

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SeekIC No. : 003430296 Detail

NP35N04YUG-E1-AY: MOSFET N-CH 40V 35A 8HSON

NP35N04YUG-E1-AY Data Sheet

floor Price/Ceiling Price

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Part Number:
NP35N04YUG-E1-AY
Mfg:
Supply Ability:
5000

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  • $.71
  • $.62
  • $.55
  • $.44
  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 35A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 10 mOhm @ 17.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 54nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2850pF @ 25V
Power - Max: 1W Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: 8-HSON    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Feature: Standard
Power - Max: 1W
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 35A
Gate Charge (Qg) @ Vgs: 54nC @ 10V
Manufacturer: Renesas Electronics America
Package / Case: 8-SMD, Flat Lead Exposed Pad
Supplier Device Package: 8-HSON
Input Capacitance (Ciss) @ Vds: 2850pF @ 25V
Rds On (Max) @ Id, Vgs: 10 mOhm @ 17.5A, 10V


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