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NP82N04PUG-E1-AZ

MOSFET N-CH 40V 82A TO-263

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SeekIC No. : 003432915 Detail

NP82N04PUG-E1-AZ: MOSFET N-CH 40V 82A TO-263

NP82N04PUG-E1-AZ Data Sheet

floor Price/Ceiling Price

US $ .71~.71 / Piece | Get Latest Price
Part Number:
NP82N04PUG-E1-AZ
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~800
  • Unit Price
  • $.71
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 82A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 41A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 160nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 9750pF @ 25V
Power - Max: 1.8W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Power - Max: 1.8W
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 160nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: Renesas Electronics America
Current - Continuous Drain (Id) @ 25° C: 82A
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 41A, 10V
Supplier Device Package: TO-263
Input Capacitance (Ciss) @ Vds: 9750pF @ 25V


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