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NP82N055DHE

Features: •Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)• Low Ciss: Ciss = 3500 pF TYP.• Built-in gate protection diodeSpecifications Drain to Source Voltage (VGS = 0 V) VDSS 55 V Gate to Source V...

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NP82N055DHE: Features: •Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)• Low Ciss: Ciss = 3500 pF TYP.• Built-in gate prot...

NP82N055DHE Data Sheet

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Part Number:
NP82N055DHE
Supply Ability:
5000

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Product Details

Description



Features:

•Channel temperature 175 degree rated
• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 3500 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 55 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) ID(DC) ±82 A
Drain Current (Pulse) Note1 ID(pulse) ±300 A
Total Power Dissipation (TA = 25 °C) PT 163 W
Total Power Dissipation (TC = 25 °C) PT 88 W
Single Avalanche Current Note2 IAS 34 / 27 / 10 A
Single Avalanche Energy Note2 EAS 11 / 72 / 100 mJ
Channel Temperature Tch 175 °C
Storage Temperature Tstg 55 to + 175 °C
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 s, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.)


Description

These products NP82N055DHE are N-channel MOS Field Effect Transistor designed for high current switching applications.


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